Measurement and analysis of development rates Responds to resists on the Si substrate, multilayer substrate, Al substrate, and ARC.
Developing characteristic analysis Measurement of γ value, Eth and discrimination curves and calculation of development contrast (tanθ)
Determination of accurate model parameters Determination of development parameters, diffusion lengths, and surface insoluble parameters
Creation of data tables and transfer of data to the simulator
Automatic supply and discharge system for developer
Automatic insertion of wafers and substrate sizes of 4 to 8 inches (12 inches compatible) |