SiFusion Furnaceware offers greater performance than previously available with quartz and silicon carbide consumables.

All SiFusion products are constructed out of pure poly silicon material, making them the industry’s choice for high purity, low maintenance, cost of ownership and environmental impact. The product line includes components for all vertical furnace applications in 200 mm and 300 mm environments.

SiFusion furnaceware is designed and manufactured for easy installation into the hot zones of all major OEM furnaces, including Tokyo Electron (TEL), Kokusai, Aviza and ASM.

SiFusion - High Temperature Processes

High temperature processes in semiconductor manufacturing include anneal, drive and oxidation. These processes, designed to reduce stress on the wafer, place extreme conditions upon the fixtures within the furnace, which can cause slip, lattice strain and other instabilities that can damage wafers.

Superior Structural Stability

SiFusion furnaceware can survive severe temperature cycling and performs without deformities in demanding processes reaching temperatures up to 1350°C. SiFusion's thermal shock resistance means fixtures maintain their mechanical tolerances at temperatures far above those experienced by IC wafers.

Silicon fixtures exposed to 1350°C in excess of 12 months have maintained tolerances and exhibited no structural degeneration from their original form. In high temperature applications, product life has been demonstrated to extend beyond four years.

SiFusion Advantages for High Temperature Processes

•  - Low crystal slip and stress
•  - Lower metallic contamination
•  - Less contact point damage
•  - Reduced boat marks
•  - Increased ramp rates
•  - Reduced thermal stabilization times
•  - No deformation (up to 1350°C)
  
  

  SiFusion - LPCVD Processes
  Low Pressure Chemical Vapor Deposition (LPCVD) processes, including silicon nitride and polysilicon, are important steps in wafer manufacturing, using the high diffusivity of gasses to create a uniform deposition thickness.
  
  

  SiFusion components, made from pure poly silicon, significantly reduce fixture-generated particulates, a key concern in LPCVD processes. As deposition film thickness on furnace fixtures increases, thermal stress between the films and quartz or silicon carbide furnace fixtures results in the film's fracturing, which in turn results in flaking. The resultingparticle generation severely affects yield.

  In LPCVD applications, SiFusion products deliver low particles without costly routine cleaning or associated hazardous wastes.

  SiFusion Advantages for LPCVD

  •  - Reduced killer particles
  •  - No particle bursts
  •  - No breaking injectors
  •  - No peeling or flaking
  •  - No warping or deformation
  •  - No routine cleaning