Features: 7X improvement of thickness uniformity per single pass 20X ultimate thickness uniformity improvement Throughput of up to 8 wafers per hour Close to Zero minimum thickness loss if needed (patent pending) Film thickness distribution adjustment to +/- 4A Surface Roughness Improvement Advantages: Simple and robust transfer mechanism DC based Ion Source - no filaments, no grids, simple maintenance Millisecond response time Zero minimum etch rate - does not require extra material deposition, and results in no degradation of the device Thickness adjustment - of any Conductive and Non-conductive films Cluster Tool combines Trimming Module and PVD Module for robust and economically advantageous approach to high scale manufacturing of FBAR/SAW devices
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